Figure 1: XRMS spectra showing G-AFM order in epitaxial ETO films grown on STO(001) and LSAT (001) substrates.
From: Reversible control of magnetic interactions by electric field in a single-phase material
(a) A series of reciprocal L-scans (film normal) through the (1/2 1/2 5/2)ETO reflection of the nominally unstrained ETO on STO(001) through a range of temperatures crossing TN. Also seen is a half-order reflection from the STO substrate owing to AFD order. The measurements were taken in vertical scattering geometry with σ- to π-polarization selection analysis (inset) used to suppress charge and optimize the magnetic/charge scattering ratio. (b) A similar temperature-dependence data set for the compressively (−0.9%) strained ETO on LSAT(001). The encumbering substrate charge intensity originates from anti-phase boundary half-order reflections typical of LSAT. The inset shows the resonant response with an energy scan at 1.5 K through the Eu LII edge. The error bars present s.d.
