Figure 3: Conductances for Si(001) NMs of different thicknesses and two surface conditions.
From: Probing the electronic structure at semiconductor surfaces using charge transport in nanomembranes
Si(2 × 1) reconstructed surfaces (red circles) compared to the same NMs with adsorbed H (blue squares) for three different NM thicknesses: 77 nm (a), 120 nm (b) and 220 nm (c). The curves have been shifted along the voltage axis to put the minima at 0V. For clean reconstructed surfaces, there is always a flat region around Gmin, in contrast to H-covered surfaces. The width of this region increases for thinner membranes. The horizontal dotted lines show the bounds of the conductance minima for all our clean-surface measurements. The average value is indicated by the dashed line and is 2.5 × 10−9 Ohm−1.
