Figure 4: Schematic diagrams of surface electronic structures and comparison of data and simulations for a 120-nm thick Si NM.

(a,c): band diagrams without and with surface defect electronic structure. In (c) the peak indicates the energy position of the type-C defects. (b,d): corresponding calculations and experimental data. In (b) only surface bands are taken into consideration while in (d) type-C defects are added to the model. Black: data; blue curves: without surface charge mobility; red curves: with surface charge mobility. The π and π^* band positions are taken from ²⁰. The type-C defects are described as a Gaussian distribution with a peak position 0.50 eV above E_V and a full width at half maximum of 0.078 eV (3k_BT at room temperature). The fitting parameters at the back Si/SiO₂ interface are D_it=9.5 × 10¹¹ eV⁻¹ cm⁻² and Q_ox=6.7 × 10¹¹ cm⁻². The carrier mobility within the π^* band is 45 cm² V⁻¹ s⁻¹.