Figure 5: Scanning tunneling micrograph of a Si(001) surface miscut toward ‹110› by ~1°, giving mean terrace widths of ~10 nm.
From: Probing the electronic structure at semiconductor surfaces using charge transport in nanomembranes
Image diagonal: ~100 nm. The image is shown in derivative mode to accentuate steps, dimer rows and surface defects. The surface steps down from upper left. Image courtesy Brian Swartzentruber.
