Figure 5: Photoconducting properties of the GNR and the intramolecular junction.
(a) Schematic description of the experimental setup of the photoelectric measurement. (b) Photoconductivity response of a GNR at Vsd=0.5 V when a global laser beam with PI at 13.2 (black), 9.6 (red), 6.4 (green) and 4.5 (blue) kW cm−2 is turned on and off. (c) An SEM image of a SWNT/GNR junction device. Scale bar, 2 μm. The upper insets are an AFM image of the area indicated by a dash frame in the SEM image, and the height profiles across the lines in the AFM image. The arrow heads indicate the locations between which the heights were determined. The lower inset shows Ip at Vsd=0 V when a 2-μm-size focused laser beam scans along the junction from A to B as marked in the SEM image. (d) Isd–Vsd curves of the SWNT/GNR junction device in dark (black) and when a 34.7 kW cm−2 laser beam was focused at the junction (red). The right inset is the Isd–Vsd curves with linear Y-axis, and the left inset depicts the experiment setup. (c,d) SWNT was grounded, Vsd, Ip or Vp were applied or measured on GNR. CCD, charge-coupled device.
