Figure 4: TEM images of the rGO-embedded GaN template.

(a) Cross-sectional bright field image of GaN/rGO/sapphire interface. Scale bar, 100 nm. (b,c) High-resolution snapshots of GaN/rGO/sapphire interface obtained in the rectangular region marked in a. The crystal plane direction and lattice spacing are marked in (b). Scale bar, 5 nm. (d) Average profile of intensity obtained in the rectangular region of c.