Figure 2: Lattice matching of the GaAs1-xPx shell using X-ray diffraction.
From: Surface-passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon
(a) A GaAsP core-shell growth series consisting of four growths with identical core growth parameters. The series was aligned using the sharp Si(111) peak from the substrate. The peaks to the left are from the nanowire crystal, and any shift or broadening of the peaks towards the right represents a shift in lattice size towards a higher P content. (b) Two GaAsP core-shell growths with the only difference being the addition of an InGaP passivation layer to R30. The unpassivated and passivated SNWSCs were fabricated using nanowires from these two growths. (c) Scanning electron microscope image of a core-shell GaAsP nanowire from the same growth as the best device. Scale bar, 1 μm.
