Figure 1: An isolated DB on an n-type Si(001):H surface.
From: Quantum engineering at the silicon surface using dangling bonds
(a,b) Filled- and empty-state STM images (±1.7 V; 25 pA; 16 × 14 nm2) of a single DB taken at 77 K, with corresponding line profiles shown in c and d. Length measurements have associated uncertainties of ±0.05 nm. The screening length of 2.1 nm calculated from the filled-state image is in agreement with a Thomas–Fermi estimate16. The empty-state image exhibits a ~12 nm diameter enhancement disc due to ionization of the DB and a ~5-nm depression due to non-equilibrium charging of the DB. These features exhibit the expected dependence on the applied bias (see Supplementary Note S1 and Supplementary Fig. S1).
