Figure 4: Characterizations and electronic measurements of graphene nanoribbons.

(a) Design of a SST DNA nanoribbon with 60 nm width, assembled by thousands of short-strand tiles. (b) AFM image of a graphene nanoribbon derived from metallized DNA nanolithography. Scale bar, 1 μm. (c) Raman spectrum of a single-layer graphene nanoribbon. (d) SEM image of graphene nanoribbons under an operation voltage of 1.0 kV. Scale bar, 10 μm. (e) The contour plot of the conductance G of a graphene nanoribbon FET under different gate voltages and low temperatures. The applied Vds is 0.1 V. (f) Minimum conductance Gmin of a graphene nanoribbon device at different temperatures. The inset shows a 3D-rendered AFM topography of the device with a channel length of 2 μm.