Figure 2: Normal state characterization.
From: Symmetry protected Josephson supercurrents in three-dimensional topological insulators
(a) Longitudinal resistivity ρxx, (b) Hall carrier density nH and (c) longitudinal conductivity σxx for device 1 as functions of backgate voltage. The maximum in ρxx (min in σxx) and divergence of nH indicate the location of the Dirac point (DP) and the presence of both carrier types. (d) ARPES data of the bulk crystal along the Γ–K line, showing the expected Dirac cone band structure of the surface state. The Dirac point and the bottom of the bulk conductance band (BCB) are indicated by arrows. It is clear from ARPES and Hall data that the system passes through a true topological regime of only surface states.
