Figure 3: Dependence of supercurrents on gate voltage.
From: Symmetry protected Josephson supercurrents in three-dimensional topological insulators

Differential resistance (dV/dI) versus gate voltage in the normal regime (B=35 mT) for (a) device 1 and (c) device 2, showing locations of Dirac points in the Josephson configuration. Two-dimensional plots of dV/dI versus gate voltage Vg and current I for (b) device 1 and (d) device 2. The purple regions show the extent of the supercurrent, where dV/dI=0; the boundaries of these regions correspond to Ic. The bottom of the bulk conduction band is labelled as white dashed lines in b and d.