Figure 5: Rate equation simulations of DNP.
From: Efficient room-temperature nuclear spin hyperpolarization of a defect atom in a semiconductor
PN as a function of τA and γeNc, simulated by the rate equation analysis. The key fitting parameters used are: τs=150 ps, τN=10 ns, τd=1 ns, T1SC=5 ns and 
=5%.
