Figure 2: Highly aligned NW FETs.
From: Large-scale organic nanowire lithography and electronics
(a) Transfer characteristics (ID–VG) (inset: device appearance and channel region) and (b) output (ID−VD) characteristics of P3HT blend NW FET with 20% PEO (inset: device structure). (c) Transfer characteristics and (d) output characteristics of poly{[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)} (N2200) blend NW FET with 20% PEO. (e) Transfer characteristics of P3HT blend NW FET with 30% PEO at different numbers of wires. (f) Maximum on-current versus the number of wires.
