Figure 5: Large-area single P3HT:PEO-blend NW FET and complementary inverter circuit arrays. | Nature Communications

Figure 5: Large-area single P3HT:PEO-blend NW FET and complementary inverter circuit arrays.

From: Large-scale organic nanowire lithography and electronics

Figure 5

(a) Large-area single P3HT:PEO-blend (70:30, w/w) NW FET array (7 cm × 7 cm) with ~300-nm channel length (144 bottom-contact devices). (b) Histogram of the mobility for large-area P3HT:PEO-blend NW FET array with an average of 3.8±1.6 cm2 V−1 s−1. (c) Large-area single P3HT:PEO-blend NW FET array on polyarylate (PAR) substrate. (d) Input–output voltage characteristic for complementary inverter circuit based on P3HT:PEO-blend NWs and N2200:PEO-blend NWs (inset: gain characteristics). (e) Optical image of inverter array (left, scale bar, 2 mm) and schematic illustration of an inverter (right).

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