Figure 3: Spin-valley relaxation for multi-electron occupancy.
From: Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
(a) Energy diagrams of the two-electron spin-valley states in the dot’s potential well (left) and as a function of B field (right). Dashed line indicates that T+ is not accessible (see text). (b) Relaxation rate as a function of B field for N=2 and EVS=0.58 meV. Red (blue) crosses represent data points at fields smaller (larger) than the anticrossing point. Dashed lines are the calculated rates fitted with r2e=4.76 nm. Right inset: Data from the main graph re-plotted as a function of the modulus of the detuning energy, δ. Points of equal absolute detuning have nearly the same decay rates. δ5 dependence (grey line) is a guide for the eye. Left inset: Relaxation rate as a function of B field for N=3 and EVS=0.58 meV. Results for N=1 are also shown for comparison.
