Figure 4: Spin Lifetime in the gate-control device.
From: Gate control of the electron spin-diffusion length in semiconductor quantum wells

(a) Photoluminescence intensity (colour code in arbitrary units) as a function of both time and photon energy for a reverse bias V=5 volts. The white curve represents the PL intensity as a function of time when the emission is spectrally integrated. The decay time of this PL dynamics corresponds to the electron lifetime τ. (b) PL circular polarization degree Pc (colour code from Pc=0 to Pc=0.30) as a function of both time and photon energy for a reverse bias V=5 volts. Pc=(I+−I−)/(I++I−), where I+ and I− are the PL circular components, respectively, co- and counter-polarized with the incident laser beam. The white curve represents Pc as a function of time when the emission is spectrally integrated. The decay time of this Pc dynamics corresponds to the electron spin-relaxation time τs. (c) Gate control of the electron spin lifetime Ts. (d) Gate control of the spin-relaxation time τs.