Figure 5: GenSin barriers and insights from wave-functions.
From: Genetic design of enhanced valley splitting towards a spin qubit in silicon
(a) Calculated VS (in meV) for a 40 MLs Si quantum well embedded in the GenSin (n=1, 2, 4, 8, 16) superlattice barriers on a 40% Ge substrate. The result for pure Ge barrier (n=∞) is shown for comparison. (b,c) Calculated VS (in meV) shown as a function of (b) planar-averaged (in the XY plane) wave-function squared magnitude at the interface (
), and (c) planar-averaged wave-function squared penetration into the barriers 
for a 40 MLs Si quantum well embedded in random alloy and 16-ML period (see Supplementary Fig. S2 for detailed description) superlattice barriers, on a 40% Ge substrate. The averaged wave-function magnitude between two Z-valley states is used for such calculations.
