Figure 1: Experimental method for manufacturing single-SWNT devices.
From: Diameter-dependent ion transport through the interior of isolated single-walled carbon nanotubes
(a) Aligned single-walled carbon nanotubes (SWNTs) are grown on a silicon wafer, identified with a marker, diameter characterized with Raman spectroscopy, all but one or a few SWNT removed with a razor blade, a two-reservoir epoxy structure bonded to the wafer, SWNT ends opened with oxygen plasma etching, and finally devices are tested with Ag/AgCl electrodes with various electrolyte solutions. (b) Example of scanning electron microscope (SEM) identification of all aligned SWNT grown on a device with the chosen SWNT for study marked. Scale bar for the SEM indicates 100 μm. (c) SEM microscope images of two representative 1.569 and 1.37 nm SWNTs (left), scale bar for the SEM indicates 100 μm. Raman characterization of the diameter of the chosen SWNT based on the radial breathing mode, and metallic/semiconductor nature based on G-peak (right).
