Figure 2: Altshuler–Aronov–Spivak and AC oscillations in an InGaAs-based ring array.
From: Control of the spin geometric phase in semiconductor quantum rings
(a) Scanning electron microscope image of an array of 40 × 40 InGaAs-based rings. The radius of each ring is 0.6 μm. Scale bar, 5 μm. (b) Magnetoresistance of the ring array in perpendicular magnetic fields B⊥ at 1.5 K shows the AAS oscillations. The gate voltage Vg=1.1 V. (c) Vg dependence of the AAS oscillations amplitude. (d) Vg dependence of the AAS amplitude at B⊥=0, corresponding to the AC effect in the TR paths. The red dashed line represents the theoretical prediction of equation (2). To plot the dashed line, we used the relation between the Rashba SO-coupling constant αR versus Vg, which was obtained from the Shubnikov–de Haas analysis13 in the Hall bar.
