Figure 2: Observation of an enhanced T_c with dislocations.

(a) False-colour SEM image of sample A. Scale bar, 5 μm. (b) Temperature dependence of the in-plane resistivity ρ_ab for sample A, taken at zero applied magnetic field. (c) Magnetic field dependence of ρ_ab for sample A. (d) False-colour SEM image of sample B. The red square indicates the area examined by TEM. Scale bar, 5 μm. (e) TEM image of the boxed area in d for sample B, showing dislocation lines but no Ru nanodomains. Scale bar, 200 nm. The regions not shown in this image were also checked by TEM and found to possess no Ru nanodomains. (f) Zero-field ρ_ab(T) for sample B. (g) False-colour SEM image of sample C. The red square indicates the area examined by TEM. Scale bar, 10 μm. (h) TEM image of the boxed area in g for sample C. Scale bar, 1 μm. (i) Zero-field ρ_ab(T) for sample C. Inset: ρ_ab(H) for sample C. In the above line plots, the dashed lines indicate a linear fit of the normal-state resistivity. The deviation from such a fit defines the onset T_c and upper critical field.