Figure 5: Measured switching speed of As-Te-Ge-Si-N 30 nm-sized switch device.
From: A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory
(a) Real-time oscilloscope response measuring switching speed with external circuit schematics used detailed on right. (b) Zoomed-in response at the instant from off-state to on-state. Switching time was 4 ns. (c) Zoomed-in response at the instant from on-state to off-state. Switching time was under 2 ns.
