Figure 1: Quantum dot electric-double-layer transistor. | Nature Communications

Figure 1: Quantum dot electric-double-layer transistor.

From: Large modulation of zero-dimensional electronic states in quantum dots by electric-double-layer gating

Figure 1

(a) Schematic diagrams of the liquid-gated EDL transistor based on a single InAs QD. The cations and anions are DEME+ and TFSI−, respectively. (b) An optical microscope image of a fabricated sample showing the nano-gap metal electrodes and the EDL-gate electrodes immersed in the optically transparent ionic liquid (DEME-TFSI). Scale bar, 50 μm. (c) A scanning electron microscope image of the nano-gap metal electrodes bridged by a single InAs QD. The metallurgical size of the InAs QD used in this study was about 70 nm × 110 nm × 25 nm. Scale bar, 150 nm.

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