Figure 2: Transport properties measured at 215 K. | Nature Communications

Figure 2: Transport properties measured at 215 K.

From: Large modulation of zero-dimensional electronic states in quantum dots by electric-double-layer gating

Figure 2

(a) Transfer characteristics (ISD−VEDL) of an InAs QD transistor with an EDL gate measured at 215 K. The transfer characteristics of each sample were reproducible and the curves of three consecutive scans were almost overlapped with each other. (b–d) Schematic energy band diagrams (upper panel) and carrier distributions in the InAs QDs (lower panel) at VEDL~−1 V (b),~0 V (c) and ~1 V (d). The conduction and the valence bands are denoted as ECB and EVB, respectively.

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