Figure 3: Memory characteristics of flexible 1D–1R cell. | Nature Communications

Figure 3: Memory characteristics of flexible 1D–1R cell.

From: Flexible and twistable non-volatile memory cell array with all-organic one diode–one resistor architecture

Figure 3

(a) I–V curve of 1D–1R cell before, after bending, twisted and rolled. (b) I–V characteristic of 1D–1R cell under gradual bending and statistical ION/IOFF ratio distribution of 1D–1R cell under gradual bending. (c) I–V characteristic of 1D–1R cell and statistical ION/IOFF ratio distribution during gradual twisting. (d) ION/IOFF ratio and leakage current of diode until device malfunction.

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