Figure 1: Charge-transfer correlated oxide.
From: Heterointerface engineered electronic and magnetic phases of NdNiO3 thin films
(a) Accessibility of latent phases in the heterointerface system. Interfacial constraints control both the band filling through a ‘self-doping’ effect and the bandwidth allowing new phases to appear that are not observed in bulk systems, even under significant pressure and chemical doping. Phases that may be obtained include a charge-transfer insulator, covalent insulator, p metal, NFL and Fermi liquid. In this work, we report an emergent PI regime and a remarkably stable NFL over a significant portion of the phase diagram. (b) Four NdNiO3 orthorhombic unit cells. Arrows denote spins in the associated E′-type AFM structure with the ↑—↑—↓—↓ stacking of the pseudocubic (111) FM planes, one of which is highlighted in red. One of the octahedra is highlighted to denote the binding with the oxygen ligand holes. (c,d) Schematics of partial density of states (PDOS) for charge-transfer Mott materials with d- and p-type electrons. Δ is the charge-transfer energy, and U is the on-site d-electron Coulomb repulsion energy. The core-level and 1s→2p transition involved in the O K-edge X-ray absorption are indicated in d.
