Figure 2: Phase evolution with heteroepitaxial constraint.
From: Heterointerface engineered electronic and magnetic phases of NdNiO3 thin films
(a) Lattice mismatch-temperature phase diagram. NFL, PI and AFI denote non-Fermi liquid, paramagnetic insulator and AFM insulator, respectively. T** (blue), T′ (green) and the hysteric inflection point (red) are denoted by close circles, whereas TN is denoted by open pentagon and its error bar is defined as the temperature step size, 10 K. (b) Temperature-dependent resistivity versus heteroepitaxial lattice mismatch. (c) q-scans across the E′-type AFM reflection intensity at k=(1/4,1/4,1/4) ((1/2,0,1/2) in orthorhombic notation) observed by resonant X-ray diffraction at the Ni L3-edge at 12 K (blue solid line at ε=+1.8% and dashed black line at ε=+0.3%) and 140 K (red dashed line at ε=+1.8%). (d) the temperature derivative of the resistivity, indicating a T-linear behaviour at high temperatures at ε=−0.3%. Fit-free analysis of the T4/3 power-law behaviour for ε=−0.3% (e) and −1.2% (f), and the T5/3 power-law behaviour for ε=−2.9% (g). The upper red triangle signals the upper temperature limit T′ where the resistivity crosses over to a linear T behaviour. The lower green triangle indicates the lower temperature where the temperature dependence starts to deviate.
