Figure 2: Structure and I–V behaviour of the CTM sample.
From: In situ electron holography study of charge distribution in high-κ charge-trapping memory
(a) The low-magnification cross-section image of the CTM sample. (b) The normalized I–V curves measured on the wafer and in TEM, with and without electron beam illumination (black: wafer test, red: in situ test with beam off, green: in situ test with beam on). (c) The high-magnification image of the polycrystalline HfO2 layer, the insert is the fast Fourier transform of one HfO2 grain. (d) The phase image of the unbiased CTM sample involving the three dielectric stacks and the Si substrate; the uneven phase in HfO2 layer come from the polycrystalline feature. The dashed lines in c and d indicate the position of grain boundary. Scale bar, 10 nm (a), 5 nm (b), 5 nm (c).
