Figure 5: Experimental and the simulated phase profiles.
From: In situ electron holography study of charge distribution in high-κ charge-trapping memory
(a) 5 V, (b) 6 V, (c) 7 V, (d) 8 V, (e) 9 V. Experimental data are averaged from the rectangles in Fig. 3, plotted with simulated phase curve. The flat phase in the Si region confirms the uniform thickness of the sample.
