Figure 4: Electrical performance of laterally coupled IZO transistor.
From: Artificial synapse network on inorganic proton conductor for neuromorphic systems

(a) Schematic image of the self-assembled laterally coupled IZO transistor fabricated by one shadow mask method. D1=80 μm, D2=300 μm. (b) Transfer curve of the laterally-coupled IZO transistor measured at Vds=1.0 V. (c) The leakage current of the SiO2 electrolyte films. (d) Output curve of the laterally coupled IZO transistor.