Figure 4: Tunnel magnetoresistance effects through the chromium oxide clusters.
From: Size-induced enhanced magnetoelectric effect and multiferroicity in chromium oxide nanoclusters
The data shown are for a device with a nominal Cr thickness of 0.3 nm. (a) Typical R(H) curve at 6 K under a bias voltage V=130 mV (symbols) and fit to the experimental data assuming sequential tunneling through superparamagnetic clusters with magnetic moment m=78 μB (line). (b) Normalized R(H) curves for increasing bias voltages between 10 mV (black) and 1.4 V (violet). For the sake of clarity, curves are shifted and only the increasing field branch is shown. (c) Variation of the magnetic moment of the clusters m with the applied voltage V as deduced from R(H) curves at 6 K. Data for four different devices of the same sample are shown with different symbols. The lines are guides to the eyes.
