Figure 8: Bias dependence of TMR.
From: Size-induced enhanced magnetoelectric effect and multiferroicity in chromium oxide nanoclusters
Variation of the TMR ratio with the applied voltage, at 6 K, for a device with tCr=0.3 nm. The inset shows a zoom in the low voltage range of the TMR(V) curve (symbols) and fits of the experimental data (lines) to the expression 
, with TMR0=0.99% and Vp=7.1 mV. To account for the usual asymmetry of the bias dependence of TMR in Fe/MgO-based magnetic tunnel junctions9, different values of TMR1 were allowed for positive (1.14%) and negative (1.61%) voltages.
