Figure 1: Diagrams of schematics and band structure describing the PDs.
From: High photoresponsivity in an all-graphene p–n vertical junction photodetector
Schematics of (a) a typical graphene p–n diode for photodetection and (b) its magnified version showing an interlayer between metallic p- and n-graphene (p-G and n-G) layers. The diodes are illuminated with defocused light sources (xenon lamp or laser) with spot sizes that well match the device window of 5 × 5 mm2 size. For the electrodes, Ag was used. (c) Band diagram of the p–n PD under forward (positive) bias. Red and white spots represent photoexcited electrons and holes, respectively, and lateral arrows indicate the transport directions of electrons and holes contributing to DCs and photocurrents. (d) A real image of a typical PD.
