Figure 4: Electrical characteristics of the DTTM active antenna-based devices. | Nature Communications

Figure 4: Electrical characteristics of the DTTM active antenna-based devices.

From: Silicon-based broadband antenna for high responsivity and polarization-insensitive photodetection at telecommunication wavelengths

Figure 4

(a–c) Photoelectric characteristics of the DTTM-based devices measured under a bias voltage of 0 V. (a) Responsivity spectra of the proposed DTTM devices and of the nanoantenna-based devices reported by Knight et al.7 (b) Correlation between excess current and incident light power for the DTTM-based device at a wavelength of 1,550 nm. Within the incident power range from 20.5 μW to 3 mW, the excess current of the DTTM device exhibited a linear response (R2=0.9998). (c) Distribution of the responsivity of a DTTM device at wavelengths from 1,440 to 1,590 nm when illuminated at high power density with light from a tunable laser.

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