Figure 2: Current transients of a-GaOx films during resistive switching from HRS to LRS.
From: Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour
Current transients of 90-nm-thick pristine films after applying a bias of −1.7 V to the TE at t=0. The coloured dots are the measured values, and the red lines are the fits by a stretched exponential function, J/J0=Aexp{−(t/τ)β}, with fitting parameters of pre-exponential factor A, relaxation time τ (s) and Kohlrausch stretching exponent β (for details see main text). Inset: temperature dependence of the I-V characteristics of 90-nm-thick films, measured at vsw=0.5 V− s−1. Best fitting for the 90 nm films at 25, 50, 80 and 110 °C was obtained with a set of parameters (A, τ, β)=(10.1, 0.24, 0.88), (9.4, 0.20, 0.88), (9.8, 0.057, 0.90) and (10.6, 0.011, 0.93), respectively.
