Figure 2: Performance of QQT(CN)4 Fe-FET memories in p- and n-type dual mode.
From: Non-volatile organic memory with sub-millimetre bending radius
(a) Transfer characteristics of an as-prepared p-type QQT(CN)4 Fe-FET measured at VDS=−5 V. (b) Transfer characteristics of the QQT(CN)4 devices after annealing at different temperatures for 10 s each. (c) Transfer characteristics of an n-type QQT(CN)4 Fe-FET that was annealed at 180 °C for 10 s. The arrows show the current switching directions of the p- and n-type hysteresis curves. (d,e) Data retention characteristics measured for p-type and n-type devices, respectively, with VDS=−5 V and VDS=+5 V after programming the device with single voltage pulses for the ON and OFF current. (f) Write/erase endurance cycle test as a function of the number of programming cycles for the p-type QQT(CN)4 Fe-FETs. For clarity, one cycle out of every four is represented. The programming voltage pulses for switching ON and OFF states of a p-type Fe-FET were −50 and +50 V, respectively. The read voltages of the p-type Fe-FET for both ON and OFF states were VG=−10 V and VDS=−5 V. The programming voltage pulses for switching ON and OFF states of an n-type Fe-FET were +50 and −50 V, respectively. The read voltages of the n-type Fe-FET for both ON and OFF states were VG=10 V and VDS=5 V.
