Figure 2: Thermal conductance in submicron devices.

(a) Experimental thermal conductance per unit cross-section area σ/A as a function of temperature in samples with L: 300 nm–700 nm. The ballistic limit is indicated by the black dashed curve³⁴. (b) Molecular dynamics (MD) simulation results (black triangles) of thermal conductance σ/σ₀ versus sample length L at T=300 K. Simulation results are compared with experiments (blue circles and brown diamonds) assuming different values of thermal contact resistance R_c. The MD thermal conductance is normalized to σ₀, where σ₀ is the calculated thermal conductance in a sample with 5.5 nm between the hot and the cold reservoir; the experimental data are normalized to the ballistic limit shown in Fig. 2a at T=300 K, that is, σ₀/A=4.17 × 10⁹ Wm⁻² K⁻¹.