Figure 4: Comparison of phononic structure in the theoretical model and experimental data.
(a–c), Qualitative comparison between our theoretical model (dashed) and experimental data (solid) for the upper sideband as a function of microwave power (applied to the C-gate). ε* is the dimensionless detuning, normalized by the microwave angular frequency ω0=2π × 32 GHz. (d) Experimental data as a function of detuning showing the evolution of the step-like feature (on the left side of the sideband peak) with microwave power. (e) Theoretical results using parameters for GaAs and independently measured experimental conditions (see Methods). Colouring emphasizes the sideband amplitude. Note that charge noise, when averaged by the rf-QPC, rounds-out the sharper features in the experimental data.
