Figure 2: Observation of in-plane dispersion in Cd3As2.
From: Observation of a three-dimensional topological Dirac semimetal phase in high-mobility Cd3As2
(a) Left: First-principles calculation of the bulk electronic structure along the (π, π, 0.15(2π)/(c*))−(0, 0, 0.15(2π)/(c*)) direction (c*=c/a). Right: Projected bulk band structure on to the (001) surface, where the shaded area shows the projection of the bulk bands. (b) Angle-resolved photoemission spectroscopy (ARPES) measured dispersion map of Cd3As2, measured with photon energy of 22 eV and temperature of 15 K along the (−π,−π)−(0, 0)−(π, π) momentum space cut direction. (c) ARPES constant energy contour maps using photon energy of 22 eV on Cd3As2 growth batch I for binding energies 0 meV, 70 meV, 200 meV, 270 meV and 400 meV for panel from left to right, respectively. (d) ARPES constant energy contour maps using photon energy of 102 eV on Cd3As2 batch II for binding energies 0 meV, 50 meV, 100 meV, 200 meV and 300 meV for panel from left to right, respectively. In order to achieve chemical potential (carrier concentration) control, we have prepared different batches of samples under slightly different growth conditions (temperature and growth time). For the two batches studied here, batch I is found to be slightly more n-type than batch II (e.g. compare batch I in Fig. 1f with batch II in Fig. 3a rightmost panel).
