Figure 3: Effects of different device areas and Ni thicknesses.
From: Hybrid superconducting-magnetic memory device using competing order parameters
Maximum supercurrent versus magnetic field characteristics of various S–PSV–S JJs are compared. (a,b) The effects of different junction areas. The actual areas are estimated to be (a) 2.6 μm2 and (b) 0.78 μm2, based on the RnAeff ≈ 8.0 mΩ μm2. The JJ designs are (a) 1.6 μm × 3.2 μm and (b) 1.2 μm × 2.4 μm ellipses. The Ni thickness is 1 nm for both JJs. (c,d) Very large ΔIc with opposite signs for two different Ni thicknesses (c) 1.5 nm and (d) 2 nm. As designed, both JJs are 1.4 μm × 2.8 μm ellipses. The symbols and the curves represent data and fits, respectively. (e,f) Illustrations of the origin of the different ΔIc in c and d, respectively. Effective F thickness means the Ni thickness that would result in the same phase shift in the PSV. The decay in Ic is ignored for simplicity. A P or AP state results in an increased or decreased phase (blue or red dashed line) relative to that given by the Ni thickness only. The measurement temperature is 4 K.
