Figure 4: Characteristic voltage V c versus Ni thickness of S-PSV-S devices.
From: Hybrid superconducting-magnetic memory device using competing order parameters
The PSV structures are Ni0.7Fe0.17Nb0.13(2.1 nm)/Cu(5 nm)/Ni(dNi) with varying dNi. Symbols and solid lines are data and fits, respectively. The measurement temperature is 4 K. P and AP states are indicated by blue squares and green circles, respectively. Each Vc datum is an average for a few JJ samples. For dNi<3 nm, each Vc datum is an average for either three or four devices, resulting in an error bar comparable to or smaller than the marker size (the standard error of the mean Ic≤20 % of the mean Ic). For dNi≥3 nm, the sample size is 1. Left inset: device multilayer structure and its equivalent S–F–S structure as an approximation. Right inset: critical current density Jc (given by Vc/RnAeff) versus Ni thickness.
