Figure 5: Electrical characterization of nanogap phototodiodes.
From: Sub-15-nm patterning of asymmetric metal electrodes and devices by adhesion lithography
(a,b) Current–Voltage (I–V) curves for Al/Au and Ti/Au nanogap photodiodes, formed by depositing a uniform composite layer of poly(3-hexylthiophene) (P3HT) and C71-butyric acid methyl ester (PCBM) across the surface of the substrate, see Supplementary Fig. 10. I–V curves were measured at multiple illumination intensities between 0 and 150 mW cm−2. (c) Normalized corrected photocurrent versus voltage curves for the Al/Au and Ti/Au nanogap photodiodes at illumination levels >20 mW cm−2, obtained by subtracting the dark current and dividing through by the magnitude of the short-circuit current. Consistent behaviour is observed at all illumination levels. (d,e) Normalized short-circuit current versus normalized light intensity for the Al/Au and Ti/Au nanogap photodiodes.
