Figure 3: A comparison of measured tunnelling spectra with calculated PDOS for expected BiTeI terminations.
From: Mapping polarization induced surface band bending on the Rashba semiconductor BiTeI
(a) Spatially averaged STS curves taken in the rectangular areas bounded by dashed lines in the STM topography map (inset, with a scale bar of 20 nm). The black curve has been enhanced by a factor of five for ease of comparison. The discrepancy in curve intensities is thought to arise from the density-of-states contrast between the terminations resulting in different tip-to-sample distances determined by the tunnelling feedback set-point (Vbias=0.7 V, Iset=0.3 nA). (b) PDOS calculated for the uppermost atomic layer for the relaxed (solid curves) and unrelaxed (dashed curves) surfaces terminated by Te (black curves) and I (red curves). The atomic structure models for the two terminations are illustrated in the inset.
