Figure 2: Hysteretic behaviour of the MR at T=11 K.
From: Active control of magnetoresistance of organic spin valves using ferroelectricity
(a–c) MR scans in the as-grown state of a FE-OSV device (PZT in ‘up’ polarization) with the same applied bias (VMR) but different initial ramping voltage (VMAX). Here, LSMO is treated as the anode. The switching fields of FE-OSV are confirmed by superconducting quantum interference device measurements (see Supplementary Fig. 3 and Supplementary Note 3). (d,e) MR(VMR) profiles taken at two different values of positive (orange) and negative (blue) VMAX. ΔV represents the shift of MR (VMR) profiles, and a′/a, b′/b and c′/c mark the positions at which the six MR loops in a–c are taken(VMAX: +1.2 V and −1.2 V). (f) Dependence of ΔV on VMAX. ΔV for both FE-OSV devices (A and B) increases with increasing VMAX, while the three types of control devices (FE-MTJ, STO-OSV and LSMO-OSV) do not show any significant ΔV. The error bars represent the uncertainty of the MR measurements including both systematic error (estimated from the asymmetry in the MR loops) and the statistical error (see Supplementary Fig. 4 and Supplementary Note 4).
