Figure 4: Structure and charge carrier properties of CdTe QDs and cation-exchanged HgxCd1−xTe QDs.
From: Mapping the spatial distribution of charge carriers in quantum-confined heterostructures

(a) Schematic illustrations of CdTe QDs, homogeneous alloy HgxCd1−xTe QDs, or core–shell CdTe/HgTe QDs generated through Cd2+ replacement by Hg2+. (b) Energy band diagrams showing the valence and conduction bands (grey), potential energy wells (black lines) and quantum-confined kinetic energy levels (red lines) of electrons and holes in each QD, as calculated using the effective mass approximation. (c,d) RDF (, nm−1) plots of the electron (e) and hole (h) for the 1st and 2nd excitons. Wavefunction overlap integrals (φ) are also provided. Constructive overlap is schematically depicted as green and destructive overlap is black.