Figure 1: High-field MPC of an OPV cell based on D–A blend.

(a) An OPV cell structure based on BHJ D–A blend. (b) MPC(B) response of an OPV cell made of rrP3HT/PCBM blend measured at room temperature up to 8 T. The solid line is a fit of the high-field region using the Δg dispersive relaxation model (see text) using the following parameters: ΔB1/2=3.66 T, α=0.74, J/gμB=2.9 mT, Δg=0.002 and τ=0.6 × 10−9 s. (c) MPC(B) response showing in more details the field range up to 0.4 T. The solid line is a fit using a HFI+Δg model (see text). (d) MC of a diode made of P3HT biased at 3 V using the same set-up as in b. Only the narrow component due to the HFI is obtained. (e,f) I–V characteristics (e) and MPC(B) response (f) of rrP3HT/C61–PCBM (1:1 weight ratio, power conversion efficiency~3%) device, under 470-nm diode laser illumination at various temperatures. The solid red lines through the data points in f represent fits of the high-field region using the ‘Δg dispersive relaxation’ model (see text).