Table 1 Spread of reported barrier heights in MgO MTJs.

From: Localized states in advanced dielectrics from the vantage of spin- and symmetry-polarized tunnelling across MgO

Experiments

Low-bias RT TMR (%)

φ (eV)

Freitas65

165

0.45–0.59

Moodera20

130

0.39 (Defect)/0.82 (background)

Yuasa40

180

0.39

Parkin41

220

1.1–1.7

This work

  

Brinkman fit57

100

1.2 (P)/0.8 (AP)

Îrel fit45

100

0.62 (P)/0.5 (AP)

  1. MTJs, magnetic tunnel junctions; RT, room temperature; TMR, tunnelling magnetoresistance ratio.
  2. Correlation between values of TMR found at RT and low bias and the tunnelling barrier height φ, which was typically found using an analytical model56,57. Barrier heights for our MTJs are presented for two models45,57, which we compare throughout the manuscript. Many reports such as refs 21, 43 do not discuss the actual device barrier height, let alone the barrier heights for P and AP.
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