Figure 2: Electronic structure and spin-degenerate bands of bulk MoSe2.
From: Observation of monolayer valence band spin-orbit effect and induced quantum well states in MoX2
(a) Angle-resolved photoemission spectroscopy (ARPES) electronic structure measurements (left panel) and first-principles calculated electronic structure (right panel) of MoSe2 crystals along the high symmetry direction 
. (b) Same as a for measurements and calculations along the high symmetry direction 
. (c) Zoomed-in version of the ARPES electronic structure spectra along the direction near the top of the valence band, highlighting the two distinct spin-degenerate bands at the 
point of the BZ. (d–f) Constant binding energy contours at EB=1.4, 1.7 and 2.0 eV, which are indicated in panel c. The green hexagon in d represents the first BZ. The two distinct bands can also be distinguished in the contour at EB=2.0 eV in f from the electron-like pockets around the 
points. The ARPES measurements were performed at photon energy of hν=90 eV and temperature of T=20 K.
