Figure 3: Evolution between magnetism-induced negative MR and topology-induced WAL.
From: Electrically tuned magnetic order and magnetoresistance in a topological insulator
Gate voltage dependence of MR at various temperatures. At T=8 K (a) magnetism-induced negative MR at −15 V gradually evolves to the topology-induced WAL behaviour as the gate voltage is swept to +2 V, but with further increase of Vg up to +15 V the MR becomes negative again as that in the p-type regime. Similar trend is observed at T=10 K (b) 12 K (c) and 15 K (d).
