Figure 3: STM evidence on the TSS in Sample 4.
From: Topological transport and atomic tunnelling–clustering dynamics for aged Cu-doped Bi2Te3 crystals
(a,b)STM and spectrum images, respectively, around a defect, which demonstrate the electronic interference of a 2D surface state. (c) dI/dV curve for Sample 4. The black dashed line indicates the position of the Fermi level. Bulk valence band and bulk conduction band mark the positions of the valence and conduction bands, respectively, which are −0.10 and 0.06 eV higher than the Fermi level. The STM images are taken at a current of 0.5 nA.
