Figure 4: Electronic structure of double-layer FeSe/SrTiO 3 film (sample #1) annealed at 350 °C for different times.

The sequences 1–6 correspond to an accumulative time of 15, 30.5, 46.5, 66.5, 87.5 and 92.5 h, respectively (see Methods for experimental details). (a) Fermi surface evolution as a function of the annealing time. (b–d) Band structure evolution with annealing time for the momentum cuts across Γ (b), M2 (c) and M3 (d). The location of the three cuts are the same as shown in Fig. 3e. The band structures shown here are second derivatives of the original images with respect to energy. (e) Band structure (original data) of the annealed double-layer FeSe/SrTiO3 film (corresponding to the sequence 6) along cut 2 across M2 measured at 23 K (left panel) and 70 K (right panel). The photoemission images are divided by the corresponding Fermi distribution function to highlight opening or closing of an energy gap. (f) Corresponding symmetrized EDCs on the Fermi momentum measured at different temperatures.